DocumentCode
2636221
Title
A High-Power, C-Band Multiple IMPATT Diode Amplifier
Author
Lee, R.E. ; Parker, D. ; Gysel, U.
fYear
1973
fDate
4-6 June 1973
Firstpage
163
Lastpage
165
Abstract
The design and performance of a high-power, reflection type microwave amplifier is described. The amplifier utilizes four individually matched silicon IMPATT diodes and a hybrid-circuit power-combiner scheme to achieve a CW output of 8 watts at 5.23 GHz with 6-dB gain and a power added efficiency of over 5 percent. FM and AM noise performance of the IMPATT amplifier is compared to that of a medium power klystron. The design of the hybrid-circuit power combiner is outlined and test results obtained on the four-way combiner are presented.
Keywords
Circuits; Diodes; High power amplifiers; Power amplifiers; Power combiners; Power generation; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123134
Filename
1123134
Link To Document