• DocumentCode
    2636229
  • Title

    Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET´s

  • Author

    Park, Hokyung ; Nicollian, Paul E. ; Reddy, Vijay

  • Author_Institution
    CMOS Dev. Reliability, Adv. CMOS Technol. Design & Integration, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET´s. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.
  • Keywords
    MOSFET; LV-SILC characteristics; NBTI; PBTI stress; SiON; pMOSFET; positive bias temperature instability; positive charge generation; Degradation; Hydrogen; Interface states; Logic gates; MOSFET circuits; Silicon; Stress; Donor Interface Trap; Hydrogen Release; Low-Voltage-Stress-Induced-Leakage-Current; Positive and Negative Bias Temperature Instability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241939
  • Filename
    6241939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2636229