DocumentCode
2636235
Title
Characteristics of IMPATT Diode Reflection Amplifiers
Author
Laton, R.W. ; Haddad, G.I.
fYear
1973
fDate
4-6 June 1973
Firstpage
166
Lastpage
168
Abstract
The nonlinear characteristics of stable IMPATT diode reflection amplifiers including the dependence of gain, bandwidth and saturation properties upon device material, doping profile and operating conditions are given.
Keywords
Admittance measurement; Circuits; Diodes; Doping profiles; Laboratories; Power generation; Radio frequency; Radiofrequency amplifiers; Reflection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123135
Filename
1123135
Link To Document