High duty-cycle (≥ 50%) operation of GaInAs/Al(Ga)AsSb quantum cascade lasers

Author

Bronner, W. ; Yang, Q. ; Manz, C. ; Kaufel, G. ; Mann, Ch. ; Köhler, K. ; Wagner, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

730

Lastpage

731

Abstract

This paper presents the operation and fabrication of GaInAs/Al(Ga)AsSb quantum cascade lasers. This article also focuses on the development of processing technology to enhance the heat removal from the active region of the lasers by depositing a thick gold layer on both sides of the laser ridge. Due to the improved heat removal devices emitting at around 4.9 μm, the quantum cascade laser can be operated at high duty cycle (≥ 50%) up to a heat-sink temperature of 130 K.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heat sinks; indium compounds; quantum cascade lasers; 130 K; 4.9 mum; GaInAs-AlGaAsSb; GaInAs/Al(Ga)AsSb lasers; heat removal; heat-sink; high duty-cycle lasers; laser active region; laser ridge; processing technology; quantum cascade lasers; thick gold layer; Gold; Laser modes; Molecular beam epitaxial growth; Optical pulses; Power generation; Power lasers; Pulsed laser deposition; Quantum cascade lasers; Space vector pulse width modulation; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548214

Filename

1548214