• DocumentCode
    2636261
  • Title

    On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability

  • Author

    Schanovsky, Franz ; Grasser, Tibor

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    It has recently been proposed that the inability of the reaction-diffusion model for the negative bias temperature instability to properly predict the experimentally observed recovery transients is due to the incomplete description of atomic motion in the one dimensional macroscopic formulation of the theory. In order to investigate this claim, we develop a microscopic formulation of the modified reaction-diffusion model and simulate it using the kinetic Monte Carlo algorithm. The results of the macroscopic and the atomistic formulation are compared. It shows that the recovery behavior predicted by the RD theory is not affected by the change of the formulation. However, differences arise for the degradation behavior, which, as the microscopic formulation is the physically more accurate description, raise questions regarding the physical relevance of the reaction-diffusion theory. In extension it is shown that any rate-equation based description in the atomic level context will be unable to properly describe the early stages of degradation.
  • Keywords
    MOSFET; Monte Carlo methods; reaction-diffusion systems; RD theory; atomic level context; atomic motion description; atomistic formulation; degradation behavior; experimentally observed recovery transients; kinetic Monte Carlo algorithm; microscopic limit; modified reaction-diffusion model; negative bias temperature instability; one dimensional macroscopic formulation; physical relevance; rate-equation-based description; Degradation; Equations; Hydrogen; Mathematical model; Microscopy; Stochastic processes; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241940
  • Filename
    6241940