Title :
F-Band TRAPATT Diode Fundamental Mode Amplifier Circuits
Abstract :
This paper describes some new circuit approaches and corresponding performance breakthroughs for F-Band TRAPATT diode circuits. Power outputs of up to 200 watts have been measured for fundamental mode operation at F-Band using alumina substrate circuits.
Keywords :
Circuit optimization; Diodes; Distributed parameter circuits; Impedance; Microwave integrated circuits; Packaging; Power amplifiers; Power generation; Power transmission lines; Radio frequency;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123138
