Title :
Performance and robustness testing of SiC power devices
Author :
Fayyaz, Asad ; Castellazzi, Alberto
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham, UK
Abstract :
This paper presents the development of a test circuit for unified testing of nominal and overload working conditions of new generation silicon-carbide power transistors and diodes, of diverse technologies and different voltage classes. The circuit is presently suitable for characterisation up to 1 kV and enables for the investigation of the device performance at different case-temperature values, as well as for the analysis of electro-thermal mismatches between devices operated in parallel.
Keywords :
power semiconductor diodes; power transistors; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; case-temperature values; electro-thermal mismatch; nominal working condition; overload working condition; robustness testing; silicon carbide diode; silicon carbide power devices; silicon carbide power transistors; test circuit; Robustness testing; Silicon carbide; Wide bandgap power devices;
Conference_Titel :
Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on
Conference_Location :
Bristol
Electronic_ISBN :
978-1-84919-616-1
DOI :
10.1049/cp.2012.0152
