Title :
Design and test of a 0.18μm CMOS low dropout voltage regulator for WSN RF chip
Author :
Xiangning, Fan ; Kuan, Bao ; Yanli, Huang
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
In this paper, a low dropout voltage regulator (LDO) for radio frequency (RF) circuits of IEEE802.15.4/ZigBee wireless sensor network (WSN) is proposed and implemented by using TSMC 0.18μm CMOS process. Bandgap reference circuit startup problem and stability of LDO are key problems of LDO circuit design, and their reasonable solutions are given in this paper. Chip measurement results demonstrate that bandgap reference can output a steady voltage of 900mV, which meets the design specification. When the bandgap reference voltage is applied, the LDO can output a voltage of 1.8V stably, and the error voltage is within design specification. The layout size (including the pads) of the LDO is 765μm×545μm.
Keywords :
CMOS integrated circuits; integrated circuit layout; personal area networks; radiofrequency integrated circuits; voltage regulators; wireless sensor networks; CMOS low dropout voltage regulator; IEEE 802.15.4-ZigBee wireless sensor network; RF circuits; TSMC CMOS process; bandgap reference circuit startup problem; chip measurement; circuit design; radio frequency circuits; size 0.18 mum; voltage 1.8 V; voltage 900 mV; Capacitors; Circuit stability; Photonic band gap; Regulators; Resistance; Voltage control; Wireless sensor networks; bandgap reference; error amplifier; low dropout voltage regulator; power management; wireless sensor networks;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607077
