DocumentCode :
2636602
Title :
Light emission and propagation in Er-doped silicon-rich oxide layers
Author :
Forcales, M. ; Wilkinson, A.R. ; Smith, N. ; Elliman, R.G.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
786
Lastpage :
787
Abstract :
In this contribution, a detailed discussion on the sensitizing effect of silicon nanoclusters is explored as a means of minimizing induced absorption and increasing the number of optically active erbium ions as a plausible way for realizing an integrated optical amplifier.
Keywords :
erbium; nanostructured materials; optical materials; silicon compounds; Er-doped silicon-rich oxide layers; Si:Er; integrated optical amplifier; sensitizing effect; silicon nanoclusters; Absorption; Erbium; Erbium-doped fiber amplifier; Integrated optics; Optical propagation; Optical sensors; Particle beam optics; Semiconductor optical amplifiers; Silicon; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548235
Filename :
1548235
Link To Document :
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