Title :
A loss-coupled 1.55 μm DFB laser having an automatically buried absorptive InAsP layer
Author :
Park, S.W. ; Han, J.H. ; Song, J.I. ; Yoon, S.Y. ; Kim, J.D. ; Yun, B.Y.
Author_Institution :
ETRI, Gwangju, South Korea
Abstract :
This paper describes a loss-coupled 1.55 μm DFB laser with an automatically buried absorptive InAsP layer. The use of the automatically buried InAsP layer implemented by a single step growth makes the device fabrication process much easier than that of conventional loss-coupled DFB LDs. The fabricated DFB LDs with AR/HR(3%/95%) coated facet show a low threshold current of 9 mA (26 mA) and a slope efficiency as high as 0.41 mW/mA (0.34 mW/mA) at 25°C (85°C), respectively, and a SMSR as high as 50 dB, a high single mode yield as high as 93%, and high reliability.
Keywords :
III-V semiconductors; antireflection coatings; distributed feedback lasers; indium compounds; laser modes; optical losses; quantum well lasers; semiconductor device reliability; semiconductor growth; 1.55 mum; 25 degC; 26 mA; 85 degC; 9 mA; DFB LD; DFB laser; InAsP; absorptive InAsP layer; antireflection coated facet; automatically buried layer; device reliability; highly reflective coated facet; loss-coupled laser; multiple quantum well layer; single mode yield; single step growth; Chemical lasers; Indium phosphide; Laser modes; Laser stability; Optical device fabrication; Optical fiber communication; Optical losses; Power lasers; Quantum well devices; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548246
