DocumentCode
2636758
Title
Performance and Limitations of FETs as Microwave Power Amplifiers
Author
Napoli, L. ; DeBrecht, R.
fYear
1973
fDate
4-6 June 1973
Firstpage
230
Lastpage
232
Abstract
The GaAs FET has excellent potential as a microwave power amplifier and has demonstrated an f t 2 (PX) product exceeding that of silicon bipolar devices. The design, fabrication, and performance limitations of GaAs power FETs is discussed. Experimental results for a multigate 4 GHz device and a single gate 7 GHz device are presented.
Keywords
Conductivity; Contact resistance; Fabrication; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave transistors; Power amplifiers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123166
Filename
1123166
Link To Document