• DocumentCode
    2636775
  • Title

    Two-Dimensional Distributed Theory Schottky Barrier Field Effect for a Microwave Transistor

  • Author

    Alley, G.D. ; Talley, H.E. ; Wright, G.L.

  • fYear
    1973
  • fDate
    4-6 June 1973
  • Firstpage
    233
  • Lastpage
    235
  • Abstract
    A small signal equivalent circuit for a SBFET derived from the basic transport equations is extended to include the effects of finite propagation velocities along the contact metallizations. Resonances are shown to occur in the device y parameters due to distributed effects along these contacts.
  • Keywords
    Equations; Equivalent circuits; Metallization; Microwave FETs; Microwave devices; Microwave propagation; Microwave theory and techniques; Microwave transistors; Schottky barriers; Schottky gate field effect transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1973 IEEE G-MTT International
  • Conference_Location
    Boulder, CO, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1973.1123167
  • Filename
    1123167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2636775