DocumentCode
2636785
Title
A 4 GHz High Power Transistor - Design and Reliability
Author
Wang, P. ; Chen, J. ; Froess, P. ; Kakihana, S.
fYear
1973
fDate
4-6 June 1973
Firstpage
236
Lastpage
238
Abstract
An experimental high power, high gain 4 GHz transistor is described. The design aspects of high breakdown voltage, ballasting resistors, metallization system and thermal design are reviewed. It is shown how these consideration have been optimized for device reliability and long MTF.
Keywords
Electronic ballasts; Gain; Metallization; Microwave devices; Microwave transistors; Power generation; Power transistors; Resistors; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123168
Filename
1123168
Link To Document