DocumentCode :
2636785
Title :
A 4 GHz High Power Transistor - Design and Reliability
Author :
Wang, P. ; Chen, J. ; Froess, P. ; Kakihana, S.
fYear :
1973
fDate :
4-6 June 1973
Firstpage :
236
Lastpage :
238
Abstract :
An experimental high power, high gain 4 GHz transistor is described. The design aspects of high breakdown voltage, ballasting resistors, metallization system and thermal design are reviewed. It is shown how these consideration have been optimized for device reliability and long MTF.
Keywords :
Electronic ballasts; Gain; Metallization; Microwave devices; Microwave transistors; Power generation; Power transistors; Resistors; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
Type :
conf
DOI :
10.1109/GMTT.1973.1123168
Filename :
1123168
Link To Document :
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