Title :
A 4 GHz High Power Transistor - Design and Reliability
Author :
Wang, P. ; Chen, J. ; Froess, P. ; Kakihana, S.
Abstract :
An experimental high power, high gain 4 GHz transistor is described. The design aspects of high breakdown voltage, ballasting resistors, metallization system and thermal design are reviewed. It is shown how these consideration have been optimized for device reliability and long MTF.
Keywords :
Electronic ballasts; Gain; Metallization; Microwave devices; Microwave transistors; Power generation; Power transistors; Resistors; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123168
