Title :
Power Transistor Amplifier Design Using Large-Signal S Parameters
Author :
Webb, J.G. ; Chaffin, R.J.
Abstract :
Large-signal S-parameters are used in the design of UHF power transistor amplifiers, yielding analytical means for calculating stability criteria and circuit impedances for the desired gain and output power. A 3.5 watt, 500 MHz amplifier designed using these methods is described.
Keywords :
Circuits; Design methodology; Impedance matching; Impedance measurement; Power amplifiers; Power generation; Power measurement; Power transistors; Scattering parameters; Stability criteria;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123169
