DocumentCode
2636834
Title
Characterization and comparison of commercially available silicon carbide (SIC) power switches
Author
Haehre, K. ; Meisser, M. ; Denk, F. ; Kling, R.
Author_Institution
Light Technol. Inst. (LTI), Karlsruhe Instiute of Technol. (KIT), Karlsruhe, Germany
fYear
2012
fDate
27-29 March 2012
Firstpage
1
Lastpage
6
Abstract
In this paper the electrical and thermal characteristics of commercially available SiC devices, normally-on and -off JFETs as well as a MOSFET, and of a high-voltage Si- MOSFET are presented. The mentioned characteristics are compared and it is shown which characteristics are the limiting factors when designing power electronics devices based on SiC power switches.
Keywords
field effect transistor switches; power semiconductor switches; silicon compounds; wide band gap semiconductors; MOSFET; SiC; normally-off JFET; normally-on JFET; power electronic device; power switch; JFET; MOSFET; SiC; switching-losses; thermal analysis;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on
Conference_Location
Bristol
Electronic_ISBN
978-1-84919-616-1
Type
conf
DOI
10.1049/cp.2012.0168
Filename
6242017
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