Design of a 118-GHz sub-harmonic mixer using foundry diodes

Author

Chen, Zhe ; Zhang, Bo ; Fan, Yong ; Zhang, Shixi ; Yang, Xiaofan

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

1

fYear

2010

fDate

17-20 Sept. 2010

Firstpage

1

Lastpage

3

Abstract

The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113-123-GHz, with 6 mW of local oscillator (LO) power. At 118 GHz, a DSB conversion loss of 12.6 dB is measured with 8 mW of LO power.

Keywords

III-V semiconductors; Schottky barriers; Schottky diode mixers; gallium arsenide; microstrip circuits; millimetre wave mixers; oscillators; DSB conversion loss; GaAs; LO power; Schottky barrier diodes; double sideband conversion loss; flip-chip; foundry diodes; frequency 113 GHz to 123 GHz; local oscillator power; loss 12.6 dB; microstrip circuit; power 6 mW; power 8 mW; subharmonic pumped mixer; Electromagnetic waveguides; Integrated circuit modeling; Loss measurement; Mixers; Power harmonic filters; Radio frequency; Schottky diodes; Schottky diodes; Submillimeter-wave; subharmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals Systems and Electronics (ISSSE), 2010 International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6352-7

Type

conf

DOI

10.1109/ISSSE.2010.5607108

Filename

5607108