Growth and properties of indium nitride thin films and InN nanostructures

Author

Briot, Olivier ; Ruffenach, Sandra ; Gil, Bernard

Author_Institution

Groupe d´´Etude des Semicond., Universite Montpellier II, France

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

856

Lastpage

857

Abstract

The growth of indium nitride quantum dots are studied. An investigation of the dot built-in strain, at the nanometric scale, performed using the synchrotron radiation is presented. These results are correlated with transmission electron microscopy images showing the dot structure. From these results, together with a thermodynamical analysis, it is shown that the dot growth mechanism is not the usual Stranski-Krastanov growth mode, but is more related to the BCF (Burton Cabrera Franck) growth mode.

Keywords

III-V semiconductors; indium compounds; nanostructured materials; optical materials; semiconductor growth; semiconductor quantum dots; semiconductor thin films; synchrotron radiation; transmission electron microscopy; wide band gap semiconductors; Burton Cabrera Franck growth mode; InN; InN nanostructures; Stranski-Krastanov growth mode; indium nitride quantum dots; indium nitride thin films; synchrotron radiation; thermodynamical analysis; transmission electron microscopy images; Gallium nitride; III-V semiconductor materials; Indium; Lattices; MOCVD; Nanostructures; Optical films; Optical materials; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548270

Filename

1548270