Title :
GaNyAs1-x-yBix semiconductor alloy for temperature-insensitive-wavelength lasers in WDM optical communication
Author :
Oe, Kunishige ; Feng, Gan ; Yoshimoto, Masahiro ; Huang, Wei
Author_Institution :
Kyoto Inst. of Technol., Japan
Abstract :
In this paper, the detailed characterization of the MBE grown GaNyAs1-x-yBix layers are reported. The quantitative effect of Bi and N incorporations on the PL peak energies and the temperature coefficients of the PL peak energies of GaNyAs1-x-yBix with various GaBi molar fractions are discussed.
Keywords :
gallium compounds; molecular beam epitaxial growth; optical communication equipment; optical fibre communication; optical materials; photoluminescence; semiconductor growth; semiconductor lasers; wavelength division multiplexing; wide band gap semiconductors; GaBi molar fractions; GaNyAs1-x-yBx; GaNyAs1-x-yBix semiconductor alloy; MBE; PL peak energies; WDM optical communication; temperature coefficients; temperature-insensitive-wavelength lasers; Bismuth; Fiber lasers; Gallium arsenide; Gallium nitride; Optical fiber communication; Photonic band gap; Plasma temperature; Semiconductor materials; Temperature dependence; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548271
