• DocumentCode
    2637161
  • Title

    GaNyAs1-x-yBix semiconductor alloy for temperature-insensitive-wavelength lasers in WDM optical communication

  • Author

    Oe, Kunishige ; Feng, Gan ; Yoshimoto, Masahiro ; Huang, Wei

  • Author_Institution
    Kyoto Inst. of Technol., Japan
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    858
  • Lastpage
    859
  • Abstract
    In this paper, the detailed characterization of the MBE grown GaNyAs1-x-yBix layers are reported. The quantitative effect of Bi and N incorporations on the PL peak energies and the temperature coefficients of the PL peak energies of GaNyAs1-x-yBix with various GaBi molar fractions are discussed.
  • Keywords
    gallium compounds; molecular beam epitaxial growth; optical communication equipment; optical fibre communication; optical materials; photoluminescence; semiconductor growth; semiconductor lasers; wavelength division multiplexing; wide band gap semiconductors; GaBi molar fractions; GaNyAs1-x-yBx; GaNyAs1-x-yBix semiconductor alloy; MBE; PL peak energies; WDM optical communication; temperature coefficients; temperature-insensitive-wavelength lasers; Bismuth; Fiber lasers; Gallium arsenide; Gallium nitride; Optical fiber communication; Photonic band gap; Plasma temperature; Semiconductor materials; Temperature dependence; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548271
  • Filename
    1548271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2637161