DocumentCode
2637176
Title
Towards p-type doping of ZnO by ion implantation
Author
Coleman, V.A. ; Tan, H.H. ; Jagadish, C. ; Kucheyev, S.O. ; Zou, J. ; Phillips, M.R.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
862
Lastpage
863
Abstract
The thermal stability of ion implanted ZnO was investigated. Heavily damaged ZnO decomposes with thermal treatment. This result has significant implications for ion implants into ZnO for p-type doping, and subsequent thermal treatments for activation.
Keywords
II-VI semiconductors; heat treatment; ion implantation; optical materials; semiconductor doping; thermal stability; wide band gap semiconductors; zinc compounds; ZnO; decomposition; ion implantation; p-type doping; thermal stability; thermal treatment; Annealing; Atomic force microscopy; Crystallization; Doping; Gallium nitride; Ion implantation; Optical microscopy; Spectroscopy; Thermal stability; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548273
Filename
1548273
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