Title :
Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process
Author :
Hsieh, P.T. ; Chen, Y.C. ; Wang, C.M. ; Tsai, Y.Z. ; Hu, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
The paper reports on the structural and photoluminescence characteristics of ZnO films, which are successfully deposited on SiO2-Si substrates at room temperature and annealed at ambient atmosphere from 200°C to 900°C. X-ray diffraction and scanning electron microscopy are used to study structural changes.
Keywords :
II-VI semiconductors; optical films; optical materials; photoluminescence; rapid thermal annealing; sputtering; wide band gap semiconductors; zinc compounds; SiO2-Si substrates; X-ray diffraction; ZnO; ZnO films; photoluminescence; rapid thermal annealing; room temperature sputtering; scanning electron microscopy; structural characteristic; Grain boundaries; Luminescence; Photoluminescence; Rapid thermal annealing; Rapid thermal processing; Scanning electron microscopy; Semiconductor films; Sputtering; Temperature; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548274
