• DocumentCode
    2637191
  • Title

    Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

  • Author

    Hsieh, P.T. ; Chen, Y.C. ; Wang, C.M. ; Tsai, Y.Z. ; Hu, C.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    864
  • Lastpage
    865
  • Abstract
    The paper reports on the structural and photoluminescence characteristics of ZnO films, which are successfully deposited on SiO2-Si substrates at room temperature and annealed at ambient atmosphere from 200°C to 900°C. X-ray diffraction and scanning electron microscopy are used to study structural changes.
  • Keywords
    II-VI semiconductors; optical films; optical materials; photoluminescence; rapid thermal annealing; sputtering; wide band gap semiconductors; zinc compounds; SiO2-Si substrates; X-ray diffraction; ZnO; ZnO films; photoluminescence; rapid thermal annealing; room temperature sputtering; scanning electron microscopy; structural characteristic; Grain boundaries; Luminescence; Photoluminescence; Rapid thermal annealing; Rapid thermal processing; Scanning electron microscopy; Semiconductor films; Sputtering; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548274
  • Filename
    1548274
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2637191