DocumentCode :
2637319
Title :
Physical models for smart-power devices
Author :
Rudan, M. ; Reggiani, S. ; Gnani, E. ; Baccarani, G. ; Corvasce, C. ; Ciappa, M. ; Stecher, M. ; Pogany, D. ; Gornik, E.
Author_Institution :
ARCES, Bologna Univ.
fYear :
2006
fDate :
22-24 June 2006
Firstpage :
28
Lastpage :
33
Abstract :
A careful prediction of the carrier mobility and impact-ionization generation is essential for the design of devices working in high-current/voltage conditions, where self-heating is relevant. Recently, some of the authors presented new physically-based models for both mobility and impact ionization, which have been validated up to very high operating temperatures. Such work is based on theoretical analyses, that confirmed both the numerical and experimental findings about the field and temperature dependencies. The availability of such models provides the background for the realization of predictive simulation tools for power and electrostatic-discharge protection devices
Keywords :
carrier mobility; electrostatic discharge; impact ionisation; power semiconductor devices; semiconductor device models; Hall-voltage measurements; carrier mobility; electrostatic-discharge protection devices; high-current condition; high-voltage condition; impact-ionization generation; self-heating; smart-power devices; Calibration; Circuit simulation; Electrostatic discharge; Impact ionization; Predictive models; Protection; Semiconductor process modeling; Silicon; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
Type :
conf
DOI :
10.1109/MIXDES.2006.1706531
Filename :
1706531
Link To Document :
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