Title :
Influence of operating temperature on passive mode locking of InGaAsP/InP laser diode
Author :
Tan, W.K. ; Wong, Hiu Y. ; Kelly, Anthony E. ; Sorel, Marc ; Marsh, John H. ; Bryce, A.C.
Author_Institution :
Dept. of Electrical and Electronics Engineering, Glasgow University, Rankine Building, 70Oakfield Avenue, G12 8LT, Glasgow, Scotland
Abstract :
The influence of operating temperature on the mode locked frequency of a passively mode locked InGaAsP/InP laser diode is reported. A simple model is used to account for the shift of frequency.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; semiconductor lasers; thermo-optical effects; InGaAsP-InP; InGaAsP/InP laser diode; frequency shift model; mode locked frequency; operating temperature; passive mode locking; Bandwidth; Diode lasers; Heat sinks; Indium phosphide; Laser mode locking; Masers; Optical pulse generation; Optical signal processing; Radio frequency; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548286
