Title :
Tunnett diode oscillators for mm-wave wideband communication and for terahertz electronics
Author_Institution :
Semicond. Res. Inst., Tokyo
Abstract :
70-706 GHz GaAs TUNNETTs, transit time diodes with tunneling injection of electrons were fabricated with molecular layer epitaxy. Their low noise makes them suitable for mm-wave and sub-mm-wave communication systems as generators or self-oscillating modulators. CW THz-wave TUNNETTs are compact and power-efficient as compared with other THz generators
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; millimetre wave diodes; submillimetre wave diodes; transit time devices; tunnel diode oscillators; wide band gap semiconductors; 70 to 706 GHz; GaAs; TUNNETT diode oscillators; mm-wave wideband communication; molecular layer epitaxy; self-oscillating modulators; sub-mm-wave communication systems; terahertz electronics; transit time diodes; tunneling injection; Electrons; Epitaxial growth; Frequency; Gallium arsenide; Millimeter wave communication; Oscillators; Power generation; Schottky diodes; Semiconductor diodes; Wideband;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706535
