DocumentCode
2637647
Title
Ultrafast relaxation processes in nanostructured materials
Author
Prasankumar, Rohit P. ; Averitt, R.D. ; Taylor, Antoinette J.
Author_Institution
Div. of Mater. Sci. & Technol., Los Alamos Nat. Lab., NM, USA
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
907
Lastpage
908
Abstract
Time-resolved dynamics of an InAs/InGaAs quantum-dots-in-a-well detector are measured at 3.9, 7.5, and 10 μm. This technique enables us to track carrier relaxation from three to two to zero dimensions for the first time.
Keywords
III-V semiconductors; carrier relaxation time; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; nanostructured materials; optical pumping; quantum well devices; semiconductor quantum dots; 10 mum; 3.9 mum; 7.5 mum; InAs-InGaAs; InAs/InGaAs quantum-dots-in-a-well detector; carrier relaxation tracking; midIR probe system; nanostructured materials; optical pump; time-resolved dynamics; ultrafast relaxation; Energy states; Gallium arsenide; Indium gallium arsenide; Materials science and technology; Nanostructured materials; Probes; Pulse amplifiers; Quantum dots; Stationary state; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548304
Filename
1548304
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