Title :
Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 μm using direct lithographic patterning
Author :
Swint, R.B. ; Juodawlkis, P.W. ; Oakle, D.C. ; Napoleon, A. ; Vineis, C.J. ; Chludzinski, J.W. ; Turner, G.W. ; Twichell, J.C. ; Bloomstein, T.M. ; Cann, S.G. ; Efremo, N.N. ; Hard, D.E. ; Marchant, M.F. ; Rothschild, M.
Author_Institution :
Lincoln Lab., MIT, USA
Abstract :
InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanopatterning; photolithography; semiconductor quantum dots; vapour phase epitaxial growth; 1.5 mum; 60 nm; 90 nm; InP-InGaAs-InP; InP/InGaAs/InP heterostructures; MOCVD; direct lithographic patterning; hydrogen silsesquioxane; lithography; nanoscale epitaxy; quantum dots; selective area epitaxy; spin-on-glass; Crystallography; Epitaxial growth; Hydrogen; Indium gallium arsenide; Indium phosphide; Interference; Lithography; MOCVD; Quantum dots; Resists;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548307
