Title :
Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD
Author :
Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Australia
Abstract :
We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to simultaneously grow quantum-dots, for the active region of the laser, and quantum-wells, for the waveguide region.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; quantum dot lasers; quantum well lasers; waveguide lasers; InGaAs; InGaAs quantum-dot laser; passive waveguide integration; quantum-dot active region; quantum-well waveguide region; selective-area MOCVD; Epitaxial layers; Indium gallium arsenide; Laser theory; Laser tuning; MOCVD; Optical waveguides; Photonic band gap; Quantum dot lasers; Substrates; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548308
