DocumentCode
2637718
Title
Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization
Author
Wong, Man ; Meng, Zhiguo ; Zhang, Dongli
Author_Institution
Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
932
Lastpage
933
Abstract
Techniques of forming polycrystalline silicon (poly-Si) using peripherally crystallized poly-Si (PCP) and solution-based large-area crystallization (LAC) are reported. Though these processes offer advantages of reduced mask-count and reduced/eliminated pattern distortion resulting from glass-shrinkage, the resulting thin-film transistor (TFT) performance is comparatively degraded.
Keywords
crystallisation; elemental semiconductors; silicon; thin film transistors; Si; metal-induced crystallization; peripherally crystallized poly-Si; polycrystalline silicon thin-film transistor; solution-based large-area crystallization; Active matrix technology; Crystallization; Electron devices; Glass; Los Angeles Council; Microwave integrated circuits; Nickel; Silicon; Thin film transistors; Windows;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548309
Filename
1548309
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