DocumentCode
2637747
Title
Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs
Author
Tai, Ya-Hsiang ; Kuo, Yan-Fu
Author_Institution
Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
936
Lastpage
937
Abstract
In this paper, the device variation and temperature dependence are crosschecked to analyze the turn-on characteristics of p-type low temperature poly-silicon thin film transistor (LTPS TFTs) statistically. The investigation into the common and device-dependent thermal behaviors is helpful to develop the active matrix organic light emitting diodes (AMOLED) model with temperature effects.
Keywords
elemental semiconductors; organic light emitting diodes; semiconductor device measurement; semiconductor device models; silicon; thermo-optical devices; thin film transistors; AMOLED model; Si; active matrix organic light emitting diode; p-type LTPS TFT; p-type low temperature poly-silicon thin film transistor; temperature dependence; turn-on characteristics; Active matrix organic light emitting diodes; Electric variables; Flat panel displays; Lattices; Phonons; Photonics; Scattering; Temperature dependence; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548311
Filename
1548311
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