Title :
Run-Time Reconfigurable Array Using Magnetic RAM
Author :
Silva, Victor ; Oliveira, Luís B. ; Fernandes, Jorge R. ; Véstias, Mário P. ; Neto, Horácio C.
Author_Institution :
INESC-ID, Tech. Univ. of Lisbon, Lisbon, Portugal
Abstract :
This paper presents the implementation of a coarse-grained magnetic RAM based reconfigurable array. The reconfigurable array architecture is organized as a one-dimensional array of programmable ALU, with the configuration bits stored in magnetic random-access memories. The use of MRAM technology to implement run-time reconfigurable hardware devices is a very promising technological solution because MRAM can provide non-volatility with cell areas and access speeds comparable to those of SRAM, and with lower process complexity than flash memory. This type of coarse-grained array, where each reconfigurable element computes on 4-bit or larger input words, is more suitable to execute data-oriented algorithms and is more able to exploit larger amounts of operation-level parallelism than common fine-grained architectures. By substantially reducing the overhead for configurability, this coarse-grain architecture is also more apt to efficiently exploit run-time reconfiguration and therefore to take advantage of multi-context MRAM-based configuration memories.
Keywords :
MRAM devices; flash memories; SRAM; coarse-grained magnetic RAM; data-oriented algorithms; fine-grained architectures; flash memory; magnetic random-access memories; one-dimensional array; operation-level parallelism; programmable ALU; run-time reconfigurable array architecture; word length 4 bit; Computer architecture; Fabrics; Field programmable gate arrays; Hardware; Magnetic tunneling; Parallel processing; Programmable logic arrays; Random access memory; Read-write memory; Runtime; MRAM; programmable fabrics; reconfigurable array;
Conference_Titel :
Digital System Design, Architectures, Methods and Tools, 2009. DSD '09. 12th Euromicro Conference on
Conference_Location :
Patras
Print_ISBN :
978-0-7695-3782-5
DOI :
10.1109/DSD.2009.198