Title :
Controlled super lateral growth enhancement of single pulse laser irradiation by heat-retaining layer
Author :
Lin, Jia-Xing ; Chen, Hung-Tse ; Wu, Hisng-Hua ; Chen, Yu-Cheng ; Chen, Chi-Lin ; Chang, Chi-Ming ; Limanov, A.B. ; Chitu, Adrian M. ; van der Wilt, Paul ; Im, James S.
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
Single-pulse excimer-laser-induced enhancement of lateral crystallization by applying a heat-retaining capping layer on amorphous silicon is well confirmed. Through analysis of polycrystalline silicon microstructure and of transient reflectance signal, we found that the capped sample had a 7 μm lateral growth, along with an 1800 ns increased melt duration, which is one order of magnitude larger than the uncapped sample.
Keywords :
amorphous semiconductors; crystal microstructure; crystallisation; elemental semiconductors; excimer lasers; heat treatment; laser beam effects; reflectivity; silicon; solid-state phase transformations; Si; amorphous silicon; crystallization; heat-retaining capping layer; polycrystalline silicon microstructure; reflectance; single-pulse excimer-laser; super lateral growth enhancement; Crystallization; Laser beams; Laser sintering; Microstructure; Optical control; Optical pulses; Reflectivity; Silicon; Temperature control; Thin film transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548312
