A SiGe Power Amplifier With Power Detector And VSWR Protection For TD-SCDMA Application

Author

Hu, Q.Z. ; Liu, Z.H. ; Yan, L. ; Zhou, W.

Author_Institution

Tsinghua Univ., Beijing

fYear

2006

fDate

22-24 June 2006

Firstpage

214

Lastpage

217

Abstract

This paper demonstrates a silicon-germanium (SiGe) HBT power amplifier for time division synchronous code-division multiple-access (TD-SCDMA) application with a single positive 3.3V supply and fully integrated on-chip input and interstage matching network. For the code-division multiple-access environment, the power amplifier delivers 30dBm power output and provides power-added efficiency (PAE) of 34.8% and an adjacent channel power ratio (ACPR) less than -35 dBc at 28 dBm. The power amplifier includes dynamic control bias circuits and a fully integrated power detector

Keywords

Ge-Si alloys; bipolar integrated circuits; code division multiple access; power amplifiers; time division multiple access; 3.3 V; HBT power amplifier; SiGe; TD-SCDMA application; adjacent channel power ratio; dynamic control bias circuits; interstage matching network; on-chip input network; power detector; power-added efficiency; time division synchronous code division multiple access; Detectors; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Multiaccess communication; Network-on-a-chip; Power amplifiers; Protection; Silicon germanium; Time division synchronous code division multiple access;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference

Conference_Location

Gdynia

Print_ISBN

83-922632-2-7

Type

conf

DOI

10.1109/MIXDES.2006.1706571

Filename

1706571