Title :
A SiGe Power Amplifier With Power Detector And VSWR Protection For TD-SCDMA Application
Author :
Hu, Q.Z. ; Liu, Z.H. ; Yan, L. ; Zhou, W.
Author_Institution :
Tsinghua Univ., Beijing
Abstract :
This paper demonstrates a silicon-germanium (SiGe) HBT power amplifier for time division synchronous code-division multiple-access (TD-SCDMA) application with a single positive 3.3V supply and fully integrated on-chip input and interstage matching network. For the code-division multiple-access environment, the power amplifier delivers 30dBm power output and provides power-added efficiency (PAE) of 34.8% and an adjacent channel power ratio (ACPR) less than -35 dBc at 28 dBm. The power amplifier includes dynamic control bias circuits and a fully integrated power detector
Keywords :
Ge-Si alloys; bipolar integrated circuits; code division multiple access; power amplifiers; time division multiple access; 3.3 V; HBT power amplifier; SiGe; TD-SCDMA application; adjacent channel power ratio; dynamic control bias circuits; interstage matching network; on-chip input network; power detector; power-added efficiency; time division synchronous code division multiple access; Detectors; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Multiaccess communication; Network-on-a-chip; Power amplifiers; Protection; Silicon germanium; Time division synchronous code division multiple access;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706571
