Laser beam induced current characterisation of HgCdTe processed using plasma techniques

Author

Park, B.A. ; Winchester, K.J. ; Musca, C.A. ; Dell, J.M. ; Faraone, L.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA, Australia

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

991

Lastpage

992

Abstract

In this paper, laser beam induced current (LBIC) has been applied to the characterization of HgCdTe n-on-p junctions fabricated through plasma induced type conversion using an inductively coupled plasma reactive ion etching (ICPRIE) tool. The nondestructive LBIC technique allows for characteristics of junctions formed under a number of different ICPRIE plasma process conditions to be investigated using only two remote contacts. This is done in order to refine the fabrication procedure which aims for controlled doping modification to produce high performance photodiodes.

Keywords

II-VI semiconductors; cadmium compounds; mercury compounds; nondestructive testing; p-n junctions; plasma materials processing; sputter etching; HgCdTe processing; controlled doping; inductively coupled plasma reactive ion etching; laser beam induced current; n-on-p junctions; nondestructive LBIC; photodiodes; plasma induced type conversion; plasma techniques; remote contacts; Doping; Etching; Fabrication; Laser beams; Optical coupling; Particle beams; Photodiodes; Plasma applications; Plasma properties; Refining;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548346

Filename

1548346