Title :
Microwave Octave-Band GaAs FET Amplifiers
Author :
Ku, W.H. ; Mokari-Bolhassan, M.E. ; Podell, A.F. ; Kendall, B.R.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The design of microwave broadband amplifiers using the 1μ-gate GaAs field-effect transistors covering the 4-8 GHz and 7-14 GHz octave bands is presented. The braodband matching networks of these amplifiers consist of lumped and/or distributed circuit elements. Using analytical and computer-aided optimization techniques, a typical octave-band amplifier has been designed with a nominal power gain of 8 dB with a maximum deviation of ±0.07dB covering the 7-14 GHz band based on the measured scattering parameters of a 1μ GaAs FET chip. For a packaged 1μ GaAs FET, a 4-8 GHz band amplifier has been designed with a gain of 7.2 dB + 0.2 dB.
Keywords :
III-V semiconductors; S-parameters; field effect transistors; gallium arsenide; lumped parameter networks; microwave amplifiers; wideband amplifiers; GaAs; broadband matching networks; distributed circuit elements; frequency 4 GHz to 8 GHz; frequency 7 GHz to 14 GHz; lumped circuit elements; measured scattering parameters; microwave broadband amplifiers; microwave octave-band FET amplifiers; Broadband amplifiers; Circuits; Design optimization; Distributed amplifiers; Gain; Gallium arsenide; Microwave FETs; Microwave amplifiers; Power amplifiers; Power measurement;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123284
