DocumentCode
2638695
Title
Wideband, High Gain, Dual Diode Gunn Amplifier Circuits
Author
de Koning, J.G. ; Goldwasser, R.E. ; Hamilton, R.J., Jr.
Author_Institution
Solid State West Div., GaAs Microwave R&D Dept., Varian Associates, Palo Alto, CA, USA
fYear
1975
fDate
12-14 May 1975
Firstpage
76
Lastpage
78
Abstract
Design and performance of wide band, low noise, single stage 10 dB gain Gunn amplifiers in X, Ku and K-band are described. Novel dual diode circuits have been utilized to achieve nearly full band gain with two series connected cathode notch Gunn diodes. Average gains of 9.3 to 11.2 dB have been obtained over 90% of X and Ku-band and 75% of K-band. Noise figures are 15.5 to 18.9 dB.
Keywords
Gunn diodes; low noise amplifiers; microwave amplifiers; wideband amplifiers; GaAs; K band; Ku band; X band; dual diode Gunn amplifier circuit; gain 10 dB; high gain amplifier circuit; low noise Gunn amplifier; noise figure 15.5 dB to 18.9 dB; single stage Gunn amplifier; wideband amplifier circuit; Bonding; Broadband amplifiers; Circuit noise; Diodes; Frequency; Gunn devices; Impedance; K-band; Microstrip; Noise figure;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location
Palo Alton, CA
Type
conf
DOI
10.1109/MWSYM.1975.1123286
Filename
1123286
Link To Document