Title :
C-Band Solid State TWT Replacement
Author :
Harris, M.R. ; Tsai, W.C. ; Paik, S.F.
Author_Institution :
Special Microwave Devices Oper., Raytheon Co., Waltham, MA, USA
Abstract :
An all solid state TWT replacement for FM/FDM applications from 5.9 to 6.4 GHz has been developed. Output capability is 10 Watts at 40 dB gain. Gunn effect, IMPATT, and Read diode amplifiers are employed.
Keywords :
Gunn devices; Gunn effect; IMPATT amplifiers; travelling wave tubes; C-band solid state TWT replacement; FM/FDM applications; Gunn effect; IMPATT; frequency 5.9 GHz to 6.4 GHz; gain 40 dB; power 10 W; read diode amplifiers; Capacitance; Diodes; Gunn devices; High power amplifiers; Microwave integrated circuits; Power amplifiers; Power generation; Regulators; Solid state circuits; Voltage;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123287
