Title :
High Power Pulsed UHF and L-Band P+-N-N+ Silicon TRAPATT Diode Oscillators
Author :
Obah, Chuka O G ; Benko, E. ; Bowers, H.C. ; Midford, T.A.
Author_Institution :
Electron Dynamics Div., Hughes Aircraft Co., Torrance, CA, USA
Abstract :
TRAPATT oscillators utilizing highly graded p+-n-n+ silicon junction devices with large p-region width to total depletion region width ratios have produced more than 500 W pulsed power output with a minimum efficiency of 25% in the UHF and L-band ranges.
Keywords :
TRAPATT diodes; UHF diodes; semiconductor junctions; L band p+-n-n+ silicon TRAPATT diode oscillators; L band range; UHF range; high power pulsed UHF; highly graded p+-n-n+ silicon junction devices; large p-region width; power 500 W; pulsed power output; total depletion region; Capacitors; Circuits; Diodes; Electron traps; L-band; Oscillators; Power harmonic filters; Radio frequency; Silicon; Space vector pulse width modulation;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123290
