DocumentCode :
2638804
Title :
Principles and application of advanced transient photoconductivity techniques
Author :
Vaezi-Nejad, S.M. ; Jenner, R.P.
Author_Institution :
School of Eng., Greenwich Univ., London, UK
Volume :
2
fYear :
1997
fDate :
19-21 May 1997
Firstpage :
942
Abstract :
Rapid advances in instrumentation and measurement technology are partly due to our better understanding of properties of materials and devices used in this technology. Important electrical properties of a wide range of high resistivity materials and devices can be investigated using techniques based on transient photoconductivity. In this paper, the principles of operation of advanced transient photoconductivity techniques developed in recent years and their application to amorphous semiconductors and polymeric materials are discussed. A novel apparatus developed by the authors are briefly described
Keywords :
amorphous semiconductors; electrical conductivity measurement; photoconductivity; polymers; semiconductor device testing; transient response; amorphous semiconductors; electrical properties; interrupted transit time of flight; polymeric materials; resistivity materials; transient photoconductivity; xerographic time of flight measurement; Amorphous materials; Amorphous semiconductors; Conductivity; Photoconducting devices; Photoconducting materials; Photoconductivity; Polymers; Semiconductor materials; Steady-state; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1997. IMTC/97. Proceedings. Sensing, Processing, Networking., IEEE
Conference_Location :
Ottawa, Ont.
ISSN :
1091-5281
Print_ISBN :
0-7803-3747-6
Type :
conf
DOI :
10.1109/IMTC.1997.610268
Filename :
610268
Link To Document :
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