DocumentCode
2638812
Title
Analysis And Design Of Ptat Temperature Sensor In Digital CMOS VLSI Circuits
Author
Golda, A. ; Kos, A.
Author_Institution
AGH Univ. of Sci. & Technol., Krakow
fYear
2006
fDate
22-24 June 2006
Firstpage
415
Lastpage
420
Abstract
The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor
Keywords
CMOS integrated circuits; VLSI; heating; temperature sensors; CMOS VLSI circuits; proportional to absolute temperature; self-heating; temperature sensor; vertical PNP structure; Analytical models; Biosensors; Bipolar transistors; CMOS digital integrated circuits; Circuit simulation; Sensor phenomena and characterization; Temperature measurement; Temperature sensors; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706612
Filename
1706612
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