Fast And Accurate Method For Small-signal Fet Equivalent Circuit Identification

We present fast, robust and accurate method for field-effect transistor small-signal equivalent circuit identification. Transistor is characterized using measured S-parameters in the microwave range at every bias point of interest. All extrinsic parasitic elements are determined using single set of measured data at the pinched coldfet state. Intrinsic parameters are estimated at every bias point using analytical expression and then fine-tuned via optimization. The procedure was implemented in MATLAB as the fully automated tool, which does not require the user interaction. This makes it suitable as a first step for large-signal modeling, where large amount of small-signal circuits has to be extracted