High Temperature Operation at 225Â°C of a Half Bridge Module using GaN HFETs

Author

Nomura, Takehiko ; Ishii, Sonomi ; Masuda, Mitsuru ; Yoshida, Seikoh ; Yamate, Tsutomu ; Sudo, Yukio ; Takeda, Jiro

Author_Institution

Yokohama R&D Lab., Furukawa Electr. Co. Ltd., Yokohama

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

1

Lastpage

5

Abstract

AlGaN/GaN HFETs are expected to be a good candidates for power switching application at high temperatures. We optimized the fabrication process of the AlGaN/GaN HFET. A low specific on-state resistance of 6.3 mOmegacm² and a large breakdown voltage of 600 V were achieved at 225degC. We also designed and fabricated a half bridge module using the AlGaN/GaN HFETs and SiC SBDs. Switching characteristics of the AlGaN/GaN HFET were investigated. The small turn-on delay of 7.2 nsec, which is 1/10 of Si MOSFET, was observed. The switching characteristics of the HFET showed no significant degradation up to 225degC

Keywords

III-V semiconductors; MOSFET; aluminium compounds; bridge circuits; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 225 degC; 600 V; 7.2 ns; AlGaN HFET; AlGaN-GaN; GaN HFET; MOSFET; SiC SBD; breakdown voltage; half bridge module; low specific on-state resistance; power switching application; small turn-on delay; Aluminum gallium nitride; Bridge circuits; Delay; Fabrication; Gallium nitride; HEMTs; MODFETs; MOSFET circuits; Silicon carbide; Temperature; GaN; HFET; high temperature; switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vehicle Power and Propulsion Conference, 2006. VPPC '06. IEEE

Conference_Location

Windsor

Print_ISBN

1-4244-0158-5

Electronic_ISBN

1-4244-0159-3

Type

conf

DOI

10.1109/VPPC.2006.364296

Filename

4211324