• DocumentCode
    2639208
  • Title

    A New "Phased-Type" Image Enhanced Mixer

  • Author

    Dickens, L.E. ; Maki, D.W.

  • Author_Institution
    Syst. Dev. Div., Westinghouse D&ESC, Baltimore, MD, USA
  • fYear
    1975
  • fDate
    12-14 May 1975
  • Firstpage
    149
  • Lastpage
    151
  • Abstract
    GaAs Schottky Barrier diodes with a zero bias cutoff frequency of 800 GHz have been used in an integrated circuit balanced mixer operating with a signal frequency centered at 12 GHz and an IF of 70 MHz. Lc at center - band was 2.2 dB. For an LO tunable bandwidth of over. 65 GHz, the conversion loss was under 3.0 dB. No image filter is used in this mixer. The conversion loss across the image band was greater than 25 dB.
  • Keywords
    III-V semiconductors; Schottky barriers; Schottky diodes; gallium arsenide; microwave mixers; GaAs; Schottky barrier diodes; conversion loss; frequency 12 GHz; frequency 70 MHz; frequency 800 GHz; image band; integrated circuit balanced mixer; phased-type image enhanced mixer; zero bias cutoff frequency; Circuits; Cutoff frequency; Diodes; Filters; Frequency conversion; Image converters; Impedance; Mixers; RF signals; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1975 IEEE-MTT-S International
  • Conference_Location
    Palo Alton, CA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1975.1123313
  • Filename
    1123313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2639208