Title :
A New "Phased-Type" Image Enhanced Mixer
Author :
Dickens, L.E. ; Maki, D.W.
Author_Institution :
Syst. Dev. Div., Westinghouse D&ESC, Baltimore, MD, USA
Abstract :
GaAs Schottky Barrier diodes with a zero bias cutoff frequency of 800 GHz have been used in an integrated circuit balanced mixer operating with a signal frequency centered at 12 GHz and an IF of 70 MHz. Lc at center - band was 2.2 dB. For an LO tunable bandwidth of over. 65 GHz, the conversion loss was under 3.0 dB. No image filter is used in this mixer. The conversion loss across the image band was greater than 25 dB.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; gallium arsenide; microwave mixers; GaAs; Schottky barrier diodes; conversion loss; frequency 12 GHz; frequency 70 MHz; frequency 800 GHz; image band; integrated circuit balanced mixer; phased-type image enhanced mixer; zero bias cutoff frequency; Circuits; Cutoff frequency; Diodes; Filters; Frequency conversion; Image converters; Impedance; Mixers; RF signals; Radio frequency;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123313
