Title :
Study On pH-ISFET Temperature Effect Using Implemented MOS Transistor
Author :
Humenyuk, I. ; Palomar, S. ; Lagrange, D. ; Assie, S. ; Franck, B. ; Marcoul, P. ; Medale, D. ; Martinez, A. ; Temple-Boyer, P.
Author_Institution :
LAAS - CNRS
Abstract :
This paper deals with the investigation of the temperature behavior of MOS-based sensors operating in the saturation region. A MOSFET transistor was integrated together with an N-pH-ISFET and used as temperature sensor to reduce the ISFET´s temperature effect. The threshold voltage shifts of the MOSFET and pH-ISFETs transistors with temperature variations have been studied in real time. A result demonstrate the use of the MOSFET transistors as a temperature sensor and enables the understanding of the temperature influence on the pH-ISFET response using a FPGA signal acquisition system
Keywords :
MOSFET; field programmable gate arrays; ion sensitive field effect transistors; temperature sensors; FPGA signal acquisition system; MOS transistor; MOS-based sensors; MOSFET transistor; N-pH-ISFET; pH-ISFET temperature effect; pH-ISFET transistors; temperature sensor; threshold voltage shifts; Biosensors; Epoxy resins; FETs; Field programmable gate arrays; Gold; MOSFET circuits; Sensor phenomena and characterization; Sensor systems; Silicon; Temperature sensors;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706636
