DocumentCode :
2639410
Title :
A Transferred-Electron Frequency Memorizer
Author :
Curtice, W.R.
Author_Institution :
RCA Labs., David Sarnoff Res. Center, Princeton, NJ, USA
fYear :
1975
fDate :
12-14 May 1975
Firstpage :
176
Lastpage :
178
Abstract :
Transferred-electron oscillators capable of single frequency operation at any of a large number of closely spaced frequencies are being developed for microwave frequency memory applications. Switching between different frequency states has been achieved with pulsed RF input signals as short as 0.1 μs in X-band (8.2-12.4 GHz).
Keywords :
Gunn oscillators; microwave oscillators; closely-spaced frequencies; frequency 8.2 GHz to 12.4 GHz; frequency states; microwave frequency memory applications; pulsed RF input signals; single-frequency operation; transferred-electron frequency memorizer; transferred-electron oscillators; Attenuation; Circuits; Delay lines; Impedance; Laboratories; Microwave frequencies; Microwave oscillators; Pulse amplifiers; RF signals; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
Type :
conf
DOI :
10.1109/MWSYM.1975.1123323
Filename :
1123323
Link To Document :
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