DocumentCode
2639643
Title
A new IGBT model based on distribution PIN model for spice
Author
Starzak, Lukaz ; Napieralski, Andrzej
Author_Institution
Tech. Univ. of Lodz
fYear
2006
fDate
22-24 June 2006
Firstpage
603
Lastpage
606
Abstract
There is a growing need for power device models that would be both accurate and fast. A pin diode model developed earlier and implemented in Berkeley SPICE through code modification is used to design a simple IGBT model that fulfills these requirements. The approach adopted in this work is also applicable to other power semiconductor devices that contain the wide and lightly doped base layer
Keywords
SPICE; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT model; SPICE; distributed pin model; power device models; Computer science; Insulated gate bipolar transistors; Microelectronics; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706653
Filename
1706653
Link To Document