DocumentCode :
2639736
Title :
Wideband Tunable and Highly Stabilized Millimeterwave IMPATT Diode Oscillators
Author :
Miyakawa, T. ; Tokoyo, N. ; Nakagami, T. ; Hayashi, H.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
fYear :
1975
fDate :
12-14 May 1975
Firstpage :
222
Lastpage :
223
Abstract :
Millimeterwave IMPATT diode oscillators which can be tuned from 35 to 75 GGz and from 70 to 100 GHz are developed. By connecting a high Q cavity, a highly stabilized oscillator is also constructed.
Keywords :
IMPATT oscillators; millimetre wave diodes; millimetre wave oscillators; Q cavity; frequency 35 GHz to 100 GHz; millimeterwave IMPATT diode oscillator; wideband tunable IMPATT diode oscillator; Coaxial components; Diodes; Frequency measurement; Impedance measurement; Joining processes; Oscillators; Power generation; Tunable circuits and devices; Waveguide transitions; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
Type :
conf
DOI :
10.1109/MWSYM.1975.1123340
Filename :
1123340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2639736
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