DocumentCode :
2639967
Title :
Direct detection of single-base extension reaction using genetic field effect transistor
Author :
Sakata, Toshiya ; Miyahara, Yuji
Author_Institution :
Biomater. Center, Nat. Inst. for Mater. Sci., Ibaraki, Japan
fYear :
2005
fDate :
12-15 May 2005
Firstpage :
219
Lastpage :
222
Abstract :
We have proposed a novel field effect transistor (FET) in combination with single-base extension for a direct, simple and non-labeled DNA sequencing, which is based on detection of molecular recognition at the gate insulator by the field effect. The intrinsic negative charges generated by DNA polymerase-assisted incorporation of deoxynucleotides can be transduced directly into electrical signal. Mere, we demonstrate that single-base extension at the gate surface can be detected directly as a shift of the threshold voltage of the FET. Moreover, it was possible to determine the base sequence of the target DNA by the iterative cycles of single-base extension with each deoxynucleotides and measurement of the threshold voltage.
Keywords :
DNA; field effect transistors; genetics; molecular biophysics; DNA polymerase; deoxynucleotide; gate insulator; genetic field effect transistor; intrinsic negative charge; molecular recognition detection; non-labeled DNA sequencing; single-base extension; threshold voltage measurement; DNA; Electrodes; FETs; Genetics; Insulation; Polymers; Probes; Sequences; Signal generators; Threshold voltage; DNA chip; genetic field effect transistor; single-base extension;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microtechnology in Medicine and Biology, 2005. 3rd IEEE/EMBS Special Topic Conference on
Print_ISBN :
0-7803-8711-2
Type :
conf
DOI :
10.1109/MMB.2005.1548431
Filename :
1548431
Link To Document :
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