Electrical stress on thin film TaN resistive structures

Author

Bonfert, Detlef ; Gieser, Horst ; Bock, Karlheinz ; Svasta, Paul ; Ionescu, Ciprian

Author_Institution

Fraunhofer Res. Instn. of Modular Solid State Technol., EMFT, Munich, Germany

fYear

2011

fDate

20-23 Oct. 2011

Firstpage

313

Lastpage

318

Abstract

Tantalum nitride thin films (TaN_x) are mechanically hard, self-passivated and corrosion - resistive layers, often used for precise thin film resistors. In order to investigate the behavior at high current densities, a DC- and a pulsed measurement technique was applied to the film resistive structures. The analysis is made on TaN_x thin film resistors on silicon substrates, with applied DC- and pulsed stress, showing the behavior before, during and after stressing. Permanent Changes or destruction of the resistive layer can occur.

Keywords

current density; electrical resistivity; pulse measurement; tantalum compounds; thin film resistors; DC measurement technique; Si; TaN_x; corrosion-resistive layers; current density; electrical stress; pulsed measurement technique; pulsed stress; thin film TaN resistive structures; thin film resistors; Current measurement; Electrical resistance measurement; Resistance; Resistors; Silicon; Stress; Transmission line measurements; DC-and Pulsed Stress; Tantalum Nitride (TaNx); Thin Film Resistors; Transmission Line Pulsing;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology in Electronic Packaging (SIITME), 2011 IEEE 17th International Symposium for

Conference_Location

Timisoara

Print_ISBN

978-1-4577-1276-0

Electronic_ISBN

978-1-4577-1275-3

Type

conf

DOI

10.1109/SIITME.2011.6102743

Filename

6102743