Title :
IMPATT Pump Sideband Noise and its Effect on Parametric Amplifier Noise Temperature
Author :
Tearle, C A ; Heath, K.R.
Author_Institution :
Services Electron. Res. Lab., Minist. of Defence (P.E.), Baldock, UK
Abstract :
This paper describes an investigation of the amplitude modulation noise sidebands of 38 GHz silicon IMPATT oscillators and the effect these noise sidebands have on the excess noise temperature of parametric amplifiers. It is shown that the noise temperature may be affected under both large and small-signal conditions to an extent which depends on the level of pump sideband noise. Simple relationships between easily measurable amplifier properties and pump noise power are given which enable the performance of any combination of pump and amplifier under the two signal conditions to be predicted. A method which simultaneously eliminates the small-signal effect and reduces the large-signal effect to an acceptable level is proposed and demonstrated to be a practical solution.
Keywords :
IMPATT oscillators; elemental semiconductors; millimetre wave amplifiers; parametric amplifiers; silicon; IMPATT pump sideband noise; Si; amplifier properties; amplitude modulation noise sidebands; frequency 38 GHz; large-signal condition; parametric amplifier noise temperature; pump noise power; silicon IMPATT oscillators; small-signal condition; Band pass filters; Degradation; Frequency; Laboratories; Noise figure; Noise level; Noise measurement; Oscillators; Power measurement; Temperature;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123383