DocumentCode
2640574
Title
IMPATT Pump Sideband Noise and its Effect on Parametric Amplifier Noise Temperature
Author
Tearle, C A ; Heath, K.R.
Author_Institution
Services Electron. Res. Lab., Minist. of Defence (P.E.), Baldock, UK
fYear
1975
fDate
12-14 May 1975
Firstpage
330
Lastpage
332
Abstract
This paper describes an investigation of the amplitude modulation noise sidebands of 38 GHz silicon IMPATT oscillators and the effect these noise sidebands have on the excess noise temperature of parametric amplifiers. It is shown that the noise temperature may be affected under both large and small-signal conditions to an extent which depends on the level of pump sideband noise. Simple relationships between easily measurable amplifier properties and pump noise power are given which enable the performance of any combination of pump and amplifier under the two signal conditions to be predicted. A method which simultaneously eliminates the small-signal effect and reduces the large-signal effect to an acceptable level is proposed and demonstrated to be a practical solution.
Keywords
IMPATT oscillators; elemental semiconductors; millimetre wave amplifiers; parametric amplifiers; silicon; IMPATT pump sideband noise; Si; amplifier properties; amplitude modulation noise sidebands; frequency 38 GHz; large-signal condition; parametric amplifier noise temperature; pump noise power; silicon IMPATT oscillators; small-signal condition; Band pass filters; Degradation; Frequency; Laboratories; Noise figure; Noise level; Noise measurement; Oscillators; Power measurement; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location
Palo Alton, CA
Type
conf
DOI
10.1109/MWSYM.1975.1123383
Filename
1123383
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