Title :
A 30GHz 2dB NF low noise amplifier for Ka-band applications
Author :
Ma, Qian ; Leenaerts, D. ; Mahmoudi, R.
Author_Institution :
Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25μm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; bipolar MIMIC; carbon; low noise amplifiers; millimetre wave amplifiers; BiCMOS technology; Ka-band application; LNA; SiGe:C; frequency 26 GHz to 32 GHz; gain 1 dB; gain 12.4 dB; gain 3 dB; low noise amplifier; noise figure 1.8 dB to 2.2 dB; power 98 mW; size 0.25 mum; BiCMOS integrated circuits; CMOS integrated circuits; Gain measurement; Low-noise amplifiers; Noise; Noise measurement; Transistors; Ka-band; SiGe:C BiCMOS technology; low noise amplifier (LNA);
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242224
