Title :
A 60GHz Class-E tuned power amplifier with PAE >25% in 32nm SOI CMOS
Author :
Ogunnika, Olumuyiwa T. ; Valdes-Garcia, Alberto
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
A Class-E tuned CMOS power amplifier (PA) operating in the 60 GHz band is presented. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA are implemented in a 32nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8dB (10dB), and saturated output power >;9dBm (12.5dBm) are measured at 60GHz from the single-ended (differential) PA with 0.9V supply.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; field effect MIMIC; integrated circuit layout; millimetre wave power amplifiers; silicon-on-insulator; PAE; SOI CMOS process; Si; class-E tuned CMOS PA design; class-E tuned power amplifier; class-E-tuned CMOS PA layout; differential PA; efficiency 27 percent; efficiency 30 percent; frequency 60 GHz; gain 10 dB; gain 8.8 dB; high-efficiency millimeter-wave PA operation; parasitic modeling; peak power-added efficiency; power gain; single-ended PA; single-stage PA; size 32 nm; voltage 0.9 V; CMOS integrated circuits; CMOS technology; Gain measurement; Power amplifiers; Power generation; Power measurement; Temperature measurement; Class-E; SOI CMOS; millimeter-wave;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242233
